Manufacturing Description

Module Manufacturer:	Team Group
Module Part Number:	TEAMGROUP-UD4-3600
DRAM Manufacturer:	Samsung
DRAM Components:	K4A8G085WB-BCPB
DRAM Die Revision / Lithography Resolution:	B / 20 nm
Module Manufacturing Date:	Week 13, 2018
Module Manufacturing Location:	Taiwan
Module Serial Number:	02035D47h
Module PCB Revision:	00h

Physical & Logical Attributes

Fundamental Memory Class:	DDR4 SDRAM
Module Speed Grade:	DDR4-2133P downbin
Base Module Type:	UDIMM (133,35 mm)
Module Capacity:	8192 MB
Reference Raw Card:	A0 (8 layers)
Initial Raw Card Designer:	SK hynix
Module Nominal Height:	31 < H <= 32 mm
Module Thickness Maximum, Front:	1 < T <= 2 mm
Module Thickness Maximum, Back:	T <= 1 mm
Number of DIMM Ranks:	1
Address Mapping from Edge Connector to DRAM:	Standard
DRAM Device Package:	Standard Monolithic
DRAM Device Package Type:	78-ball FBGA
DRAM Device Die Count:	Single die
Signal Loading:	Not specified
Number of Column Addresses:	10 bits
Number of Row Addresses:	16 bits
Number of Bank Addresses:	2 bits (4 banks)
Bank Group Addressing:	2 bits (4 groups)
DRAM Device Width:	8 bits
Programmed DRAM Density:	8 Gb
Calculated DRAM Density:	8 Gb
Number of DRAM components:	8
DRAM Page Size:	1 KB
Primary Memory Bus Width:	64 bits
Memory Bus Width Extension:	0 bits
DRAM Post Package Repair:	Not supported
Soft Post Package Repair:	Not supported

DRAM Timing Parameters

Fine Timebase:	0,001 ns
Medium Timebase:	0,125 ns
CAS Latencies Supported:	9T, 11T, 12T, 13T, 14T, 15T, 16T, 18T, 19T
DRAM Minimum Cycle Time:	0,938 ns
DRAM Maximum Cycle Time:	1,500 ns
Nominal DRAM Clock Frequency:	1066,10 MHz
Minimum DRAM Clock Frequency:	666,67 MHz
CAS# Latency Time (tAA min):	13,500 ns
RAS# to CAS# Delay Time (tRCD min):	13,500 ns
Row Precharge Delay Time (tRP min):	13,500 ns
Active to Precharge Delay Time (tRAS min):	33,000 ns
Act to Act/Refresh Delay Time (tRC min):	46,500 ns
Normal Refresh Recovery Delay Time (tRFC1 min):	350,000 ns
2x mode Refresh Recovery Delay Time (tRFC2 min):	260,000 ns
4x mode Refresh Recovery Delay Time (tRFC4 min):	160,000 ns
Short Row Active to Row Active Delay (tRRD_S min):	3,700 ns
Long Row Active to Row Active Delay (tRRD_L min):	5,300 ns
Long CAS to CAS Delay Time (tCCD_L min):	5,355 ns
Four Active Windows Delay (tFAW min):	21,000 ns
Maximum Active Window (tMAW):	8192*tREFI
Maximum Activate Count (MAC):	Untested MAC
DRAM VDD 1,20 V operable/endurant:	Yes/Yes

Thermal Parameters

Module Thermal Sensor:

Not Incorporated

SPD Protocol

SPD Revision:	1.0
SPD Bytes Total:	512
SPD Bytes Used:	384
SPD Checksum (Bytes 00h-7Dh):	5B6Fh (OK)
SPD Checksum (Bytes 80h-FDh):	B2ADh (OK)

Part number details

JEDEC DIMM Label:

8GB 1Rx8 PC4-2133P-UA0-10

Frequency	CAS	RCD	RP	RAS	RC	RRDS	RRDL	CCDL	FAW
1067 MHz	19	15	15	36	50	4	6	6	23
1067 MHz	18	15	15	36	50	4	6	6	23
1067 MHz	16	15	15	36	50	4	6	6	23
1067 MHz	15	15	15	36	50	4	6	6	23
933 MHz	14	13	13	31	44	4	5	5	20
933 MHz	13	13	13	31	44	4	5	5	20
800 MHz	12	11	11	27	38	3	5	5	17
800 MHz	11	11	11	27	38	3	5	5	17
667 MHz	9	9	9	22	31	3	4	4	14

Intel Extreme Memory Profiles

Profiles Revision: 2.0
Profile 1 (Certified) Enables: Yes
Profile 2 (Extreme) Enables: No
Profile 1 Channel Config: 1 DIMM/channel
XMP Parameter	Profile 1	Profile 2
Speed Grade:	DDR4-3598	N/A
DRAM Clock Frequency:	1799 MHz	N/A
Module VDD Voltage Level:	1,35 V	N/A
Minimum DRAM Cycle Time (tCK):	0,556 ns	N/A
CAS Latencies Supported:	19T,17T,16T,15T	N/A
CAS Latency Time (tAA):	16T	N/A
RAS# to CAS# Delay Time (tRCD):	16T	N/A
Row Precharge Delay Time (tRP):	16T	N/A
Active to Precharge Delay Time (tRAS):	36T	N/A
Active to Active/Refresh Delay Time (tRC):	53T	N/A
Four Activate Window Delay Time (tFAW):	54T	N/A
Short Activate to Activate Delay Time (tRRD_S):	13T	N/A
Long Activate to Activate Delay Time (tRRD_L):	13T	N/A
Normal Refresh Recovery Delay Time (tRFC1):	630T	N/A
2x mode Refresh Recovery Delay Time (tRFC2):	468T	N/A
4x mode Refresh Recovery Delay Time (tRFC4):	288T	N/A
Show delays in nanoseconds