Tenchi Muyo
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- 27.06.2006
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Hallo,
ich habe heute endlich meine 32GB 4.400Mhz CL17 Speicher von Mindfactory bekommen.
Leider muss ich feststellen dass das xmp völlig falsch hinterlegt ist!
Statt 4.400Mhz CL17-18-18-38
sind DDR-4000 CL16-17-17-35 hinterlegt!
Es gibt nur das eine Profil zum auswählen.
System: 10900K (SP110) mit Asus Apex XII (1003/2103 Bios)
Manufacturing Description
Physical & Logical Attributes
DRAM Timing Parameters
Thermal Parameters
Integrated Temperature Sensor
SPD Protocol
Part number details
Intel Extreme Memory Profiles
ich habe heute endlich meine 32GB 4.400Mhz CL17 Speicher von Mindfactory bekommen.
Leider muss ich feststellen dass das xmp völlig falsch hinterlegt ist!
Statt 4.400Mhz CL17-18-18-38
sind DDR-4000 CL16-17-17-35 hinterlegt!
Es gibt nur das eine Profil zum auswählen.
System: 10900K (SP110) mit Asus Apex XII (1003/2103 Bios)
Manufacturing Description
Module Manufacturer: | G.Skill |
Module Part Number: | F4-4400C17-16GTZR |
Module Series: | Trident Z RGB |
DRAM Manufacturer: | Samsung |
DRAM Components: | K4A8G085WB-BCPB |
DRAM Die Revision / Process Node: | B / 20 nm |
Module Manufacturing Date: | Undefined |
Module Manufacturing Location: | Taipei, Taiwan |
Module Serial Number: | 00000000h |
Module PCB Revision: | 00h |
Physical & Logical Attributes
Fundamental Memory Class: | DDR4 SDRAM |
Module Speed Grade: | DDR4-2133 |
Base Module Type: | UDIMM (133,35 mm) |
Module Capacity: | 16 GB |
Reference Raw Card: | B1 (8 layers) |
JEDEC Raw Card Designer: | Micron Technology |
Module Nominal Height: | 31 < H <= 32 mm |
Module Thickness Maximum, Front: | 1 < T <= 2 mm |
Module Thickness Maximum, Back: | 1 < T <= 2 mm |
Number of DIMM Ranks: | 2 |
Address Mapping from Edge Connector to DRAM: | Mirrored |
DRAM Device Package: | Standard Monolithic |
DRAM Device Package Type: | 78-ball FBGA |
DRAM Device Die Count: | Single die |
Signal Loading: | Not specified |
Number of Column Addresses: | 10 bits |
Number of Row Addresses: | 16 bits |
Number of Bank Addresses: | 2 bits (4 banks) |
Bank Group Addressing: | 2 bits (4 groups) |
DRAM Device Width: | 8 bits |
Programmed DRAM Density: | 8 Gb |
Calculated DRAM Density: | 8 Gb |
Number of DRAM components: | 16 |
DRAM Page Size: | 1 KB |
Primary Memory Bus Width: | 64 bits |
Memory Bus Width Extension: | 0 bits |
DRAM Post Package Repair: | Supported |
Soft Post Package Repair: | Not supported |
DRAM Timing Parameters
Fine Timebase: | 0,001 ns |
Medium Timebase: | 0,125 ns |
CAS Latencies Supported: | 10T, 11T, 12T, 13T, 14T, 15T, 16T |
Minimum Clock Cycle Time (tCK min): | 0,938 ns (1066,10 MHz) |
Maximum Clock Cycle Time (tCK max): | 1,500 ns (666,67 MHz) |
CAS# Latency Time (tAA min): | 13,750 ns |
RAS# to CAS# Delay Time (tRCD min): | 13,750 ns |
Row Precharge Delay Time (tRP min): | 13,750 ns |
Active to Precharge Delay Time (tRAS min): | 33,000 ns |
Act to Act/Refresh Delay Time (tRC min): | 46,750 ns |
Normal Refresh Recovery Delay Time (tRFC1 min): | 350,000 ns |
2x mode Refresh Recovery Delay Time (tRFC2 min): | 260,000 ns |
4x mode Refresh Recovery Delay Time (tRFC4 min): | 160,000 ns |
Short Row Active to Row Active Delay (tRRD_S min): | 3,700 ns |
Long Row Active to Row Active Delay (tRRD_L min): | 5,300 ns |
Long CAS to CAS Delay Time (tCCD_L min): | 5,625 ns |
Four Active Windows Delay (tFAW min): | 21,000 ns |
Maximum Active Window (tMAW): | 8192*tREFI |
Maximum Activate Count (MAC): | Unlimited MAC |
DRAM VDD 1,20 V operable/endurant: | Yes/Yes |
Supply Voltage (VDD), Min / Typical / Max: | 1,16V / 1,20V / 1,26V |
Activation Supply Voltage (VPP), Min / Typical / Max: | 2,41V / 2,50V / 2,75V |
Termination Voltage (VTT), Min / Typical / Max: | 0,565V / 0,605V / 0,640V |
Thermal Parameters
Module Thermal Sensor: | Not Incorporated |
Integrated Temperature Sensor
Manufacturer: | OnSemi |
Model: | N34TS04 |
Revision: | 30h |
Temperature Monitor Status: | Active |
Current Ambient Temperature: | 29,000 °C |
Sensor Resolution: | 0,0625 °C (12-bit ADC) |
Accuracy over the active range (75 °C to 95 °C): | ±1 °C |
Accuracy over the monitoring range (40 °C to 125 °C): | ±2 °C |
Open-drain Event Output: | Disabled |
10V of VHV on A0 pin: | Supported |
Negative Temperature Measurements: | Supported |
Interrupt capabilities: | Supported |
SMBus timeout period for TS access: | 25 to 35 ms |
SPD Protocol
SPD Revision: | 1.0 |
SPD Bytes Total: | 512 |
SPD Bytes Used: | 384 |
SPD Checksum (Bytes 00h-7Dh): | 7EAFh (OK) |
SPD Checksum (Bytes 80h-FDh): | DF74h (OK) |
Part number details
JEDEC DIMM Label: | 16GB 2Rx8 PC4-2133-UB1-10 |
Frequency | CAS | RCD | RP | RAS | RC | RRDS | RRDL | CCDL | FAW |
---|---|---|---|---|---|---|---|---|---|
1067 MHz | 16 | 15 | 15 | 36 | 50 | 4 | 6 | 6 | 23 |
1067 MHz | 15 | 15 | 15 | 36 | 50 | 4 | 6 | 6 | 23 |
933 MHz | 14 | 13 | 13 | 31 | 44 | 4 | 5 | 6 | 20 |
933 MHz | 13 | 13 | 13 | 31 | 44 | 4 | 5 | 6 | 20 |
800 MHz | 12 | 11 | 11 | 27 | 38 | 3 | 5 | 5 | 17 |
800 MHz | 11 | 11 | 11 | 27 | 38 | 3 | 5 | 5 | 17 |
667 MHz | 10 | 10 | 10 | 22 | 32 | 3 | 4 | 4 | 14 |
Intel Extreme Memory Profiles
XMP Parameter | Profile 1 | Profile 2 |
---|---|---|
Profiles Revision: 2.0 | ||
Profile 1 (Certified) Enables: Yes | ||
Profile 2 (Extreme) Enables: No | ||
Profile 1 Channel Config: 2 DIMM/channel | ||
Speed Grade: | DDR4-4008 | N/A |
DRAM Clock Frequency: | 2004 MHz | N/A |
Module VDD Voltage Level: | 1,50 V | N/A |
Minimum DRAM Cycle Time (tCK): | 0,499 ns | N/A |
CAS Latencies Supported: | 17T | N/A |
CAS Latency Time (tAA): | 16T | N/A |
RAS# to CAS# Delay Time (tRCD): | 17T | N/A |
Row Precharge Delay Time (tRP): | 17T | N/A |
Active to Precharge Delay Time (tRAS): | 35T | N/A |
Active to Active/Refresh Delay Time (tRC): | 64T | N/A |
Four Activate Window Delay Time (tFAW): | 1026T | N/A |
Short Activate to Activate Delay Time (tRRD_S): | 64T | N/A |
Long Activate to Activate Delay Time (tRRD_L): | 64T | N/A |
Normal Refresh Recovery Delay Time (tRFC1): | 16417T | N/A |
2x mode Refresh Recovery Delay Time (tRFC2): | 16417T | N/A |
4x mode Refresh Recovery Delay Time (tRFC4): | 16417T | N/A |
Show delays in nanoseconds |
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