Ja, aber mit anderen Timings. Und zu wenig RAM Testing.
Zuletzt bearbeitet:
[Sammelthread] Ryzen DDR5 RAM OC Thread
- Ersteller Reous
- Erstellt am
Indeed, mit reduzierten Spannungen lief das jetzt auch, wie von Vince vorgeschlagen aber auch, danke dafür. Dann war es wirklich primär die VDIMM.
Habe jetzt nochmal die Primaries wieder angezogen und noch einmal angeworfen.
Das ein TM5 mit 1usmus keine Stabilitätsgarantie ist, ist mir bewusst, aber ist eher den Zeitfenstern, die ich am PC sein kann und Einstellungen machen kann geschuldet
. Daher versuche ich tagsüber jetzt es soweit einzudämmen, dass es hoffentlich stabil läuft und mal lange über Nacht laufen lassen kann.Anhänge
![2024-12-22 16_06_23-HWiNFO® 64 v8.16-5600 Sensor Status [1 value hidden].png](/community/data/attachments/921/921210-9cfd533596bf2a468f1331aeeae804d6.jpg)
Super. Wenn du die Zeit findest, ließ doch mal bitte mit Thaiphoon Burner den Ram aus. Es sollte ein 4800B oder 4800BN Bin sein. Tippe auf letzteres, zumindest sind das die Spannungen dafür.Indeed, mit reduzierten Spannungen lief das jetzt auch, wie von Vince vorgeschlagen aber auch, danke dafür. Dann war es wirklich primär die VDIMM.
Habe jetzt nochmal die Primaries wieder angezogen und noch einmal angeworfen.
Das ein TM5 mit 1usmus keine Stabilitätsgarantie ist, ist mir bewusst, aber ist eher den Zeitfenstern, die ich am PC sein kann und Einstellungen machen kann geschuldet
Eben versucht, hatte es noch rumliegen. Liest aber nur "Undefined" values überall aus... :/
Liegt am Ryzen 9800x3d.. hatte das Problem auch. Mit Rammon geht es aber auch
Kann man bei den Lexar dir LED dauerhaft speichern abschalten? Bei Gskill braucht's das Tool im Tray, das weiß Gott was rumpfuscht. Dann cycle ich die vielleicht durch...
Bekomme es jetzt nicht rausgelesen, daher der export im Spoiler.
RAMMon v2.5 Build: 1000 built with SysInfo v3.0 Build: 1000
PassMark (R) Software
www.passmark.com
Memmory summary for GR3YH0UND-PC:
Number of Memory Devices: 2 Total Physical Memory: 32417 MB (32768 MB)
Total Available Physical Memory: 28473 MB
Memory Load: 12%
Item | Slot #1 | Slot #2 |
---------------------------------------------------------------------------------------------------------------|-------------------------------------------------------------------|-------------------------------------------------------------------|-
Ram Type | DDR5 | DDR5 |
Maximum Clock Speed (MHz) | 2400 (JEDEC) | 2400 (JEDEC) |
Maximum Transfer Speed (MHz) | DDR5-4800 | DDR5-4800 |
Maximum Bandwidth (MB/s) | PC5-19200 | PC5-19200 |
Memory Capacity (MB) | 16384 | 16384 |
DIMM Temperature | 29.000 | 28.000 |
Jedec Manufacture Name | G Skill Intl | G Skill Intl |
Search Amazon.com | Search! | Search! |
SPD Revision | 1.0 | 1.0 |
Registered | No | No |
ECC | No | No |
On-Die ECC | Yes | Yes |
DIMM Slot # | 1 | 2 |
Manufactured | | |
Module Part # | F5-7600J3646G16G | F5-7600J3646G16G |
Module Revision | 0x0 | 0x0 |
Module Serial # | 0x0 | 0x0 |
Module Manufacturing Location | 0 | 0 |
# of Row Addressing Bits | 16 | 16 |
# of Column Addressing Bits | 10 | 10 |
# of Banks | 32 | 32 |
# of Ranks | 1 | 1 |
Device Width in Bits | 8 | 8 |
Bus Width in Bits | 32 | 32 |
Module Voltage | 1.1V | 1.1V |
CAS Latencies Supported | 22 28 30 32 36 40 42 | 22 28 30 32 36 40 42 |
Timings @ Max Frequency (JEDEC) | 41-41-41-77 | 41-41-41-77 |
Maximum frequency (MHz) | 2400 | 2400 |
Maximum Transfer Speed (MHz) | DDR5-4800 | DDR5-4800 |
Maximum Bandwidth (MB/s) | PC5-19200 | PC5-19200 |
Minimum Clock Cycle Time, tCK (ns) | 0.416 | 0.416 |
Minimum CAS Latency Time, tAA (ns) | 16.666 | 16.666 |
Minimum RAS to CAS Delay, tRCD (ns) | 16.666 | 16.666 |
Minimum Row Precharge Time, tRP (ns) | 16.666 | 16.666 |
Minimum Active to Precharge Time, tRAS (ns) | 32.000 | 32.000 |
Minimum Row Active to Row Active Delay, tRRD (ns) | 0.000 | 0.000 |
Minimum Auto-Refresh to Active/Auto-Refresh Time, tRC (ns) | 48.666 | 48.666 |
Minimum Auto-Refresh to Active/Auto-Refresh Command Period, tRFC (ns) | 295.000 | 295.000 |
| | |
DDR5 Specific SPD Attributes | | |
Maximum Clock Cycle Time, tCKmax (ns) | 1.010 | 1.010 |
Write Recovery time (ns) | 30.000 | 30.000 |
Minimum Auto-Refresh to Active/Auto Refresh Command Period, tRFC2 (ns) | 160.000 | 160.000 |
Minimum Auto-Refresh to Active/Auto Refresh Command Period, tRFC4 (ns) | 130.000 | 130.000 |
Minimum Refresh Recovery Delay Time, tRFC1 (ns) | 0.000 | 0.000 |
Minimum Refresh Recovery Delay Time, tRFC2 (ns) | 0.000 | 0.000 |
Minimum Refresh Recovery Delay Time, tRFCsb (ns) | 0.000 | 0.000 |
Module Type | UDIMM | UDIMM |
Module information SPD revision | 1.0 | 1.0 |
SPD present | Yes | Yes |
SPD device type | SPD5118 | SPD5118 |
SPD Manufacturer | Montage Technology Group (Bank: 7, ID: 0x32) | Montage Technology Group (Bank: 7, ID: 0x32) |
PMIC 0 present | Yes | Yes |
PMIC 0 device type | PMIC5100 | PMIC5100 |
PMIC 0 Manufacturer | Richtek Power (Bank: 11, ID: 0x8C) | Richtek Power (Bank: 11, ID: 0x8C) |
PMIC 1 present | No | No |
PMIC 1 device type | | |
PMIC 1 Manufacturer | | |
PMIC 2 present | No | No |
PMIC 2 device type | | |
PMIC 2 Manufacturer | | |
Thermal Sensor 0 present | No | No |
Thermal Sensor 1 present | No | No |
Thermal Sensor device type | | |
Thermal Sensor Manufacturer | | |
Module Height (mm) | 32 | 32 |
Module Thickness Front (mm) | 2 | 2 |
Module Thickness Back (mm) | 1 | 1 |
Module Reference Card | Raw Card A Rev. 0 | Raw Card A Rev. 0 |
# DRAM Rows | 1 | 1 |
Heat spreader installed | No | No |
Operating Temperature Range | XT (0 to + 95 °C) | XT (0 to + 95 °C) |
Rank Mix | Symmetrical | Symmetrical |
Number of Package Ranks per Channel | 1 | 1 |
Number of Channels per DIMM | 2 | 2 |
Bus width extension per Channel | 0 bits | 0 bits |
Primary bus width per Channel | 32 bits | 32 bits |
DRAM Manufacture ID | 173 | 173 |
DRAM Manufacture Bank | 1 | 1 |
DRAM Manufacture Name | SK Hynix | SK Hynix |
DRAM Stepping | 0.0 | 0.0 |
SDRAM Package Type | Monolithic SDRAM | Monolithic SDRAM |
SDRAM Density Per Die | 16Gb | 16Gb |
SDRAM Column Address Bits | 10 | 10 |
SDRAM Row Address Bits | 16 | 16 |
SDRAM Device Width | 8 | 8 |
SDRAM Bank Groups | 8 | 8 |
SDRAM Banks Per Bank Group | 4 | 4 |
Second SDRAM Package Type | | |
Second SDRAM Density Per Die | | |
Second SDRAM Column Address Bits | | |
Second SDRAM Row Address Bits | | |
Second SDRAM Device Width | | |
Second SDRAM Bank Groups | | |
Second SDRAM Banks Per Bank Group | | |
First SDRAM RFM RAAMMT | 0X (FGR: 0X) | 0X (FGR: 0X) |
First SDRAM RFM RAAIMT | 0 (FGR: 0) | 0 (FGR: 0) |
First SDRAM RFM Required | no | no |
First SDRAM RFM RAA Counter Decrement per REF command | RAAIMT / 2 | RAAIMT / 2 |
Second SDRAM RFM RAAMMT | | |
Second SDRAM RFM RAAIMT | | |
Second SDRAM RFM Required | | |
Second SDRAM RFM RAA Counter Decrement per REF command | | |
First SDRAM ARFM Level A RAAMMT | 0X (FGR: 0X) | 0X (FGR: 0X) |
First SDRAM ARFM Level A RAAIMT | 0 (FGR: 0) | 0 (FGR: 0) |
First SDRAM ARFM Level A supported | no | no |
First SDRAM ARFM Level A RAA Counter Decrement per REF command | RAAIMT / 2 | RAAIMT / 2 |
Second SDRAM ARFM Level A RAAMMT | | |
Second SDRAM ARFM Level A RAAIMT | | |
Second SDRAM ARFM Level A supported | | |
Second SDRAM ARFM Level A RAA Counter Decrement per REF command | | |
First SDRAM ARFM Level B RAAMMT | 0X (FGR: 0X) | 0X (FGR: 0X) |
First SDRAM ARFM Level B RAAIMT | 0 (FGR: 0) | 0 (FGR: 0) |
First SDRAM ARFM Level B supported | no | no |
First SDRAM ARFM Level B RAA Counter Decrement per REF command | RAAIMT / 2 | RAAIMT / 2 |
Second SDRAM ARFM Level B RAAMMT | | |
Second SDRAM ARFM Level B RAAIMT | | |
Second SDRAM ARFM Level B supported | | |
Second SDRAM ARFM Level B RAA Counter Decrement per REF command | | |
First SDRAM ARFM Level C RAAMMT | 0X (FGR: 0X) | 0X (FGR: 0X) |
First SDRAM ARFM Level C RAAIMT | 0 (FGR: 0) | 0 (FGR: 0) |
First SDRAM ARFM Level C supported | no | no |
First SDRAM ARFM Level C RAA Counter Decrement per REF command | RAAIMT / 2 | RAAIMT / 2 |
Second SDRAM ARFM Level C RAAMMT | | |
Second SDRAM ARFM Level C RAAIMT | | |
Second SDRAM ARFM Level C supported | | |
Second SDRAM ARFM Level C RAA Counter Decrement per REF command | | |
sPPR Granularity | bank group | bank group |
sPPR Undo/Lock | not supported | not supported |
Burst length 32 | supported | supported |
MBIST/mPPR | supported | supported |
mPPR/hPPR Abort | not supported | not supported |
PASR | not supported | not supported |
DCA Types Supported | Device supports DCA for single / 2-phase internal clock(s) | Device supports DCA for single / 2-phase internal clock(s) |
x4 RMW/ECS Writeback Suppression | supported | supported |
x4 RMW/ECS Writeback Suppression MR selector | MR15 | MR15 |
Bounded Fault | supported | supported |
SDRAM Nominal Voltage, VDDQ | 1.1V | 1.1V |
SDRAM Nominal Voltage, VPP | 1.8V | 1.8V |
Cyclical Redundancy Code (CRC) for Base Configuration | ec8c | ec8c |
| | |
XMP Attributes | | |
XMP version | 3.0 | 3.0 |
PMIC Vendor ID | 8A8C | 8A8C |
Number of PMICs on DIMM | 1 | 1 |
PMIC capabilities | | |
PMIC has capabilities for OC functions | Yes | Yes |
Current PMIC OC is enabled | Yes | Yes |
PMIC voltage default step size | 5mV | 5mV |
OC global reset functions | No | No |
Validation and Certification Capabilities | | |
DIMM is self-certified by DIMM vendor | No | No |
PMIC Component is validated by Intel AVL level | No | No |
XMP revision | 1.1 | 1.1 |
XMP Profile 1 | | |
Profile name | Lv1-7600C36 | Lv1-7600C36 |
XMP Certified | No | No |
Recommended number of DIMMs per channel | 1 | 1 |
Module VPP voltage | 1.80V | 1.80V |
Module VDD voltage | 1.40V | 1.40V |
Module VDDQ voltage | 1.40V | 1.40V |
Memory Controller voltage | 1.10V | 1.10V |
Clock speed (MHz) | 3800 | 3800 |
Transfer Speed (MHz) | DDR5-7600 | DDR5-7600 |
Bandwidth (MB/s) | PC5-30400 | PC5-30400 |
Minimum clock cycle time, tCK (ns) | 0.263 | 0.263 |
Supported CAS latencies | 22 24 26 28 30 32 34 36 40 42 46 48 50 52 54 56 58 60 62 64 68 | 22 24 26 28 30 32 34 36 40 42 46 48 50 52 54 56 58 60 62 64 68 |
Minimum CAS latency time, tAA (ns) | 9.468 | 9.468 |
Minimum RAS to CAS delay time, tRCD (ns) | 12.098 | 12.098 |
Minimum row precharge time, tRP (ns) | 12.098 | 12.098 |
Minimum active to precharge time, tRAS (ns) | 31.823 | 31.823 |
Supported timing at highest clock speed | 36-46-46-121 | 36-46-46-121 |
Minimum Active to Auto-Refresh Delay, tRC (ns) | 43.921 | 43.921 |
Minimum Write Recovery Time, tWR (ns) | 29.982 | 29.982 |
Minimum Auto-Refresh to Active/Auto-Refresh Delay, tRFC1 (ns) | 295.000 | 295.000 |
Minimum Auto-Refresh to Active/Auto-Refresh Delay, tRFC2 (ns) | 160.000 | 160.000 |
Minimum Auto-Refresh to Active/Auto-Refresh Delay, tRFCsb (ns) | 130.000 | 130.000 |
Minimum Read to Read Command Delay Time, Same Bank Group, tCCD_L (ns) | 0.000 (0 nCK) | 0.000 (0 nCK) |
Minimum Write to Write Command Delay Time, Same Bank Group, tCCD_L_WR (ns) | 0.000 (0 nCK) | 0.000 (0 nCK) |
Minimum Write to Write Command Delay Time, Second Write not RMW, Same Bank Group, tCCD_L_WR2 (ns) | 0.000 (0 nCK) | 0.000 (0 nCK) |
Minimum Write to Read Command Delay Time, Same Bank Group, tCCD_L_WTR (ns) | 0.000 (0 nCK) | 0.000 (0 nCK) |
Minimum Write to Read Command Delay Time, Different Bank Group, tCCD_S_WTR (ns) | 0.000 (0 nCK) | 0.000 (0 nCK) |
Minimum Active to Active Command Delay Time, Same Bank Group, tRRD_L (ns) | 0.000 (0 nCK) | 0.000 (0 nCK) |
Minimum Read to Precharge Command Delay Time, tRTP (ns) | 0.000 (0 nCK) | 0.000 (0 nCK) |
Minimum Four Activate Window, tFAW (ns) | 0.000 | 0.000 |
Advanced Memory Overclocking Features | | |
Real-Time Memory Frequency Overclocking | Not supported | Not supported |
Intel Dynamic Memory Boost | Not supported | Not supported |
System CMD Rate Mode | 0N | 0N |
Vendor Personality Byte | 0x00 | 0x00 |
PassMark (R) Software
www.passmark.com
Memmory summary for GR3YH0UND-PC:
Number of Memory Devices: 2 Total Physical Memory: 32417 MB (32768 MB)
Total Available Physical Memory: 28473 MB
Memory Load: 12%
Item | Slot #1 | Slot #2 |
---------------------------------------------------------------------------------------------------------------|-------------------------------------------------------------------|-------------------------------------------------------------------|-
Ram Type | DDR5 | DDR5 |
Maximum Clock Speed (MHz) | 2400 (JEDEC) | 2400 (JEDEC) |
Maximum Transfer Speed (MHz) | DDR5-4800 | DDR5-4800 |
Maximum Bandwidth (MB/s) | PC5-19200 | PC5-19200 |
Memory Capacity (MB) | 16384 | 16384 |
DIMM Temperature | 29.000 | 28.000 |
Jedec Manufacture Name | G Skill Intl | G Skill Intl |
Search Amazon.com | Search! | Search! |
SPD Revision | 1.0 | 1.0 |
Registered | No | No |
ECC | No | No |
On-Die ECC | Yes | Yes |
DIMM Slot # | 1 | 2 |
Manufactured | | |
Module Part # | F5-7600J3646G16G | F5-7600J3646G16G |
Module Revision | 0x0 | 0x0 |
Module Serial # | 0x0 | 0x0 |
Module Manufacturing Location | 0 | 0 |
# of Row Addressing Bits | 16 | 16 |
# of Column Addressing Bits | 10 | 10 |
# of Banks | 32 | 32 |
# of Ranks | 1 | 1 |
Device Width in Bits | 8 | 8 |
Bus Width in Bits | 32 | 32 |
Module Voltage | 1.1V | 1.1V |
CAS Latencies Supported | 22 28 30 32 36 40 42 | 22 28 30 32 36 40 42 |
Timings @ Max Frequency (JEDEC) | 41-41-41-77 | 41-41-41-77 |
Maximum frequency (MHz) | 2400 | 2400 |
Maximum Transfer Speed (MHz) | DDR5-4800 | DDR5-4800 |
Maximum Bandwidth (MB/s) | PC5-19200 | PC5-19200 |
Minimum Clock Cycle Time, tCK (ns) | 0.416 | 0.416 |
Minimum CAS Latency Time, tAA (ns) | 16.666 | 16.666 |
Minimum RAS to CAS Delay, tRCD (ns) | 16.666 | 16.666 |
Minimum Row Precharge Time, tRP (ns) | 16.666 | 16.666 |
Minimum Active to Precharge Time, tRAS (ns) | 32.000 | 32.000 |
Minimum Row Active to Row Active Delay, tRRD (ns) | 0.000 | 0.000 |
Minimum Auto-Refresh to Active/Auto-Refresh Time, tRC (ns) | 48.666 | 48.666 |
Minimum Auto-Refresh to Active/Auto-Refresh Command Period, tRFC (ns) | 295.000 | 295.000 |
| | |
DDR5 Specific SPD Attributes | | |
Maximum Clock Cycle Time, tCKmax (ns) | 1.010 | 1.010 |
Write Recovery time (ns) | 30.000 | 30.000 |
Minimum Auto-Refresh to Active/Auto Refresh Command Period, tRFC2 (ns) | 160.000 | 160.000 |
Minimum Auto-Refresh to Active/Auto Refresh Command Period, tRFC4 (ns) | 130.000 | 130.000 |
Minimum Refresh Recovery Delay Time, tRFC1 (ns) | 0.000 | 0.000 |
Minimum Refresh Recovery Delay Time, tRFC2 (ns) | 0.000 | 0.000 |
Minimum Refresh Recovery Delay Time, tRFCsb (ns) | 0.000 | 0.000 |
Module Type | UDIMM | UDIMM |
Module information SPD revision | 1.0 | 1.0 |
SPD present | Yes | Yes |
SPD device type | SPD5118 | SPD5118 |
SPD Manufacturer | Montage Technology Group (Bank: 7, ID: 0x32) | Montage Technology Group (Bank: 7, ID: 0x32) |
PMIC 0 present | Yes | Yes |
PMIC 0 device type | PMIC5100 | PMIC5100 |
PMIC 0 Manufacturer | Richtek Power (Bank: 11, ID: 0x8C) | Richtek Power (Bank: 11, ID: 0x8C) |
PMIC 1 present | No | No |
PMIC 1 device type | | |
PMIC 1 Manufacturer | | |
PMIC 2 present | No | No |
PMIC 2 device type | | |
PMIC 2 Manufacturer | | |
Thermal Sensor 0 present | No | No |
Thermal Sensor 1 present | No | No |
Thermal Sensor device type | | |
Thermal Sensor Manufacturer | | |
Module Height (mm) | 32 | 32 |
Module Thickness Front (mm) | 2 | 2 |
Module Thickness Back (mm) | 1 | 1 |
Module Reference Card | Raw Card A Rev. 0 | Raw Card A Rev. 0 |
# DRAM Rows | 1 | 1 |
Heat spreader installed | No | No |
Operating Temperature Range | XT (0 to + 95 °C) | XT (0 to + 95 °C) |
Rank Mix | Symmetrical | Symmetrical |
Number of Package Ranks per Channel | 1 | 1 |
Number of Channels per DIMM | 2 | 2 |
Bus width extension per Channel | 0 bits | 0 bits |
Primary bus width per Channel | 32 bits | 32 bits |
DRAM Manufacture ID | 173 | 173 |
DRAM Manufacture Bank | 1 | 1 |
DRAM Manufacture Name | SK Hynix | SK Hynix |
DRAM Stepping | 0.0 | 0.0 |
SDRAM Package Type | Monolithic SDRAM | Monolithic SDRAM |
SDRAM Density Per Die | 16Gb | 16Gb |
SDRAM Column Address Bits | 10 | 10 |
SDRAM Row Address Bits | 16 | 16 |
SDRAM Device Width | 8 | 8 |
SDRAM Bank Groups | 8 | 8 |
SDRAM Banks Per Bank Group | 4 | 4 |
Second SDRAM Package Type | | |
Second SDRAM Density Per Die | | |
Second SDRAM Column Address Bits | | |
Second SDRAM Row Address Bits | | |
Second SDRAM Device Width | | |
Second SDRAM Bank Groups | | |
Second SDRAM Banks Per Bank Group | | |
First SDRAM RFM RAAMMT | 0X (FGR: 0X) | 0X (FGR: 0X) |
First SDRAM RFM RAAIMT | 0 (FGR: 0) | 0 (FGR: 0) |
First SDRAM RFM Required | no | no |
First SDRAM RFM RAA Counter Decrement per REF command | RAAIMT / 2 | RAAIMT / 2 |
Second SDRAM RFM RAAMMT | | |
Second SDRAM RFM RAAIMT | | |
Second SDRAM RFM Required | | |
Second SDRAM RFM RAA Counter Decrement per REF command | | |
First SDRAM ARFM Level A RAAMMT | 0X (FGR: 0X) | 0X (FGR: 0X) |
First SDRAM ARFM Level A RAAIMT | 0 (FGR: 0) | 0 (FGR: 0) |
First SDRAM ARFM Level A supported | no | no |
First SDRAM ARFM Level A RAA Counter Decrement per REF command | RAAIMT / 2 | RAAIMT / 2 |
Second SDRAM ARFM Level A RAAMMT | | |
Second SDRAM ARFM Level A RAAIMT | | |
Second SDRAM ARFM Level A supported | | |
Second SDRAM ARFM Level A RAA Counter Decrement per REF command | | |
First SDRAM ARFM Level B RAAMMT | 0X (FGR: 0X) | 0X (FGR: 0X) |
First SDRAM ARFM Level B RAAIMT | 0 (FGR: 0) | 0 (FGR: 0) |
First SDRAM ARFM Level B supported | no | no |
First SDRAM ARFM Level B RAA Counter Decrement per REF command | RAAIMT / 2 | RAAIMT / 2 |
Second SDRAM ARFM Level B RAAMMT | | |
Second SDRAM ARFM Level B RAAIMT | | |
Second SDRAM ARFM Level B supported | | |
Second SDRAM ARFM Level B RAA Counter Decrement per REF command | | |
First SDRAM ARFM Level C RAAMMT | 0X (FGR: 0X) | 0X (FGR: 0X) |
First SDRAM ARFM Level C RAAIMT | 0 (FGR: 0) | 0 (FGR: 0) |
First SDRAM ARFM Level C supported | no | no |
First SDRAM ARFM Level C RAA Counter Decrement per REF command | RAAIMT / 2 | RAAIMT / 2 |
Second SDRAM ARFM Level C RAAMMT | | |
Second SDRAM ARFM Level C RAAIMT | | |
Second SDRAM ARFM Level C supported | | |
Second SDRAM ARFM Level C RAA Counter Decrement per REF command | | |
sPPR Granularity | bank group | bank group |
sPPR Undo/Lock | not supported | not supported |
Burst length 32 | supported | supported |
MBIST/mPPR | supported | supported |
mPPR/hPPR Abort | not supported | not supported |
PASR | not supported | not supported |
DCA Types Supported | Device supports DCA for single / 2-phase internal clock(s) | Device supports DCA for single / 2-phase internal clock(s) |
x4 RMW/ECS Writeback Suppression | supported | supported |
x4 RMW/ECS Writeback Suppression MR selector | MR15 | MR15 |
Bounded Fault | supported | supported |
SDRAM Nominal Voltage, VDDQ | 1.1V | 1.1V |
SDRAM Nominal Voltage, VPP | 1.8V | 1.8V |
Cyclical Redundancy Code (CRC) for Base Configuration | ec8c | ec8c |
| | |
XMP Attributes | | |
XMP version | 3.0 | 3.0 |
PMIC Vendor ID | 8A8C | 8A8C |
Number of PMICs on DIMM | 1 | 1 |
PMIC capabilities | | |
PMIC has capabilities for OC functions | Yes | Yes |
Current PMIC OC is enabled | Yes | Yes |
PMIC voltage default step size | 5mV | 5mV |
OC global reset functions | No | No |
Validation and Certification Capabilities | | |
DIMM is self-certified by DIMM vendor | No | No |
PMIC Component is validated by Intel AVL level | No | No |
XMP revision | 1.1 | 1.1 |
XMP Profile 1 | | |
Profile name | Lv1-7600C36 | Lv1-7600C36 |
XMP Certified | No | No |
Recommended number of DIMMs per channel | 1 | 1 |
Module VPP voltage | 1.80V | 1.80V |
Module VDD voltage | 1.40V | 1.40V |
Module VDDQ voltage | 1.40V | 1.40V |
Memory Controller voltage | 1.10V | 1.10V |
Clock speed (MHz) | 3800 | 3800 |
Transfer Speed (MHz) | DDR5-7600 | DDR5-7600 |
Bandwidth (MB/s) | PC5-30400 | PC5-30400 |
Minimum clock cycle time, tCK (ns) | 0.263 | 0.263 |
Supported CAS latencies | 22 24 26 28 30 32 34 36 40 42 46 48 50 52 54 56 58 60 62 64 68 | 22 24 26 28 30 32 34 36 40 42 46 48 50 52 54 56 58 60 62 64 68 |
Minimum CAS latency time, tAA (ns) | 9.468 | 9.468 |
Minimum RAS to CAS delay time, tRCD (ns) | 12.098 | 12.098 |
Minimum row precharge time, tRP (ns) | 12.098 | 12.098 |
Minimum active to precharge time, tRAS (ns) | 31.823 | 31.823 |
Supported timing at highest clock speed | 36-46-46-121 | 36-46-46-121 |
Minimum Active to Auto-Refresh Delay, tRC (ns) | 43.921 | 43.921 |
Minimum Write Recovery Time, tWR (ns) | 29.982 | 29.982 |
Minimum Auto-Refresh to Active/Auto-Refresh Delay, tRFC1 (ns) | 295.000 | 295.000 |
Minimum Auto-Refresh to Active/Auto-Refresh Delay, tRFC2 (ns) | 160.000 | 160.000 |
Minimum Auto-Refresh to Active/Auto-Refresh Delay, tRFCsb (ns) | 130.000 | 130.000 |
Minimum Read to Read Command Delay Time, Same Bank Group, tCCD_L (ns) | 0.000 (0 nCK) | 0.000 (0 nCK) |
Minimum Write to Write Command Delay Time, Same Bank Group, tCCD_L_WR (ns) | 0.000 (0 nCK) | 0.000 (0 nCK) |
Minimum Write to Write Command Delay Time, Second Write not RMW, Same Bank Group, tCCD_L_WR2 (ns) | 0.000 (0 nCK) | 0.000 (0 nCK) |
Minimum Write to Read Command Delay Time, Same Bank Group, tCCD_L_WTR (ns) | 0.000 (0 nCK) | 0.000 (0 nCK) |
Minimum Write to Read Command Delay Time, Different Bank Group, tCCD_S_WTR (ns) | 0.000 (0 nCK) | 0.000 (0 nCK) |
Minimum Active to Active Command Delay Time, Same Bank Group, tRRD_L (ns) | 0.000 (0 nCK) | 0.000 (0 nCK) |
Minimum Read to Precharge Command Delay Time, tRTP (ns) | 0.000 (0 nCK) | 0.000 (0 nCK) |
Minimum Four Activate Window, tFAW (ns) | 0.000 | 0.000 |
Advanced Memory Overclocking Features | | |
Real-Time Memory Frequency Overclocking | Not supported | Not supported |
Intel Dynamic Memory Boost | Not supported | Not supported |
System CMD Rate Mode | 0N | 0N |
Vendor Personality Byte | 0x00 | 0x00 |
Nochmal mit einer neueren RAMMON Version:
RAMMon v3.3 Build: 1000 built with SysInfo v3.0 Build: 2001
PassMark (R) Software
www.passmark.com
============================
Memory settings
============================
Transfer rate: 8000 MT/s
Memory timings: 36-46-46-58
Channel mode: 2
============================
Memory capacity / benchmarks
============================
L1 cache: 80 KB (632.3 GB/s)
L2 cache: 1024 KB (207.1 GB/s)
L3 cache: 98304 KB (153.1 GB/s)
Physical RAM: 31.7 GB (39510 MB/s)
Latency: 41.366 ns
============================
Memory SPD information
============================
Item | Slot #1 | Slot #2 |
---------------------------------------------------------------------------------------------------------------|-------------------------------------------------------------------|-------------------------------------------------------------------|-
Ram Type | DDR5 | DDR5 |
Maximum Clock Speed (MHz) | 3800 (XMP) | 3800 (XMP) |
Maximum Transfer Speed (MT/s) | DDR5-7600 | DDR5-7600 |
Maximum Bandwidth (MB/s) | PC5-30400 | PC5-30400 |
Memory Capacity (MB) | 16384 | 16384 |
DIMM Temperature | N/A | N/A |
Jedec Manufacture Name | G Skill Intl | G Skill Intl |
Search Amazon.com | Search! | Search! |
SPD Revision | 1.0 | 1.0 |
Registered | No | No |
ECC | No | No |
On-Die ECC | Yes | Yes |
DIMM Slot # | 1 | 2 |
Manufactured | | |
Module Part # | F5-7600J3646G16G | F5-7600J3646G16G |
Module Revision | 0x0 | 0x0 |
Module Serial # | 00000000 (84cd00000000000000) | 00000000 (84cd00000000000000) |
Module Manufacturing Location | 0 | 0 |
# of Row Addressing Bits | 16 | 16 |
# of Column Addressing Bits | 10 | 10 |
# of Banks | 32 | 32 |
# of Ranks | 1 | 1 |
Device Width in Bits | 8 | 8 |
Bus Width in Bits | 32 | 32 |
Module Voltage | 1.1V | 1.1V |
CAS Latencies Supported | 22 28 30 32 36 40 42 | 22 28 30 32 36 40 42 |
Timings @ Max Frequency (JEDEC) | 40-40-40-77 | 40-40-40-77 |
Maximum frequency (MHz) | 2400 | 2400 |
Maximum Transfer Speed (MT/s) | DDR5-4800 | DDR5-4800 |
Maximum Bandwidth (MB/s) | PC5-19200 | PC5-19200 |
Minimum Clock Cycle Time, tCK (ns) | 0.416 | 0.416 |
Minimum CAS Latency Time, tAA (ns) | 16.666 | 16.666 |
Minimum RAS to CAS Delay, tRCD (ns) | 16.666 | 16.666 |
Minimum Row Precharge Time, tRP (ns) | 16.666 | 16.666 |
Minimum Active to Precharge Time, tRAS (ns) | 32.000 | 32.000 |
Minimum Row Active to Row Active Delay, tRRD (ns) | 0.000 | 0.000 |
Minimum Auto-Refresh to Active/Auto-Refresh Time, tRC (ns) | 48.666 | 48.666 |
Minimum Auto-Refresh to Active/Auto-Refresh Command Period, tRFC (ns) | 295.000 | 295.000 |
| | |
DDR5 Specific SPD Attributes | | |
Maximum Clock Cycle Time, tCKmax (ns) | 1.010 | 1.010 |
Write Recovery time (ns) | 30.000 | 30.000 |
Minimum Auto-Refresh to Active/Auto Refresh Command Period, tRFC2 (ns) | 160.000 | 160.000 |
Minimum Auto-Refresh to Active/Auto Refresh Command Period, tRFC4 (ns) | 130.000 | 130.000 |
Minimum Refresh Recovery Delay Time, tRFC1 (ns) | 0.000 | 0.000 |
Minimum Refresh Recovery Delay Time, tRFC2 (ns) | 0.000 | 0.000 |
Minimum Refresh Recovery Delay Time, tRFCsb (ns) | 0.000 | 0.000 |
Module Type | UDIMM | UDIMM |
Module information SPD revision | 1.0 | 1.0 |
SPD present | Yes | Yes |
SPD device type | SPD5118 | SPD5118 |
SPD Manufacturer | Montage Technology Group (Bank: 7, ID: 0x32) | Montage Technology Group (Bank: 7, ID: 0x32) |
PMIC 0 present | Yes | Yes |
PMIC 0 device type | PMIC5100 | PMIC5100 |
PMIC 0 Manufacturer | Richtek Power (Bank: 11, ID: 0x8C) | Richtek Power (Bank: 11, ID: 0x8C) |
PMIC 1 present | No | No |
PMIC 1 device type | | |
PMIC 1 Manufacturer | | |
PMIC 2 present | No | No |
PMIC 2 device type | | |
PMIC 2 Manufacturer | | |
Thermal Sensor 0 present | No | No |
Thermal Sensor 1 present | No | No |
Thermal Sensor device type | | |
Thermal Sensor Manufacturer | | |
Module Height (mm) | 32 | 32 |
Module Thickness Front (mm) | 2 | 2 |
Module Thickness Back (mm) | 1 | 1 |
Module Reference Card | Raw Card A Rev. 0 | Raw Card A Rev. 0 |
# DRAM Rows | 1 | 1 |
Heat spreader installed | No | No |
Operating Temperature Range | XT (0 to + 95 °C) | XT (0 to + 95 °C) |
Rank Mix | Symmetrical | Symmetrical |
Number of Package Ranks per Channel | 1 | 1 |
Number of Channels per DIMM | 2 | 2 |
Primary bus width per Channel | 32 bits | 32 bits |
Bus width extension per Channel | 0 bits | 0 bits |
DRAM Manufacture ID | 173 | 173 |
DRAM Manufacture Bank | 1 | 1 |
DRAM Manufacture Name | SK Hynix | SK Hynix |
DRAM Stepping | 0.0 | 0.0 |
SDRAM Package Type | Monolithic SDRAM | Monolithic SDRAM |
SDRAM Density Per Die | 16Gb | 16Gb |
SDRAM Bank Groups | 8 | 8 |
SDRAM Banks Per Bank Group | 4 | 4 |
Second SDRAM Package Type | | |
Second SDRAM Density Per Die | | |
Second SDRAM Column Address Bits | | |
Second SDRAM Row Address Bits | | |
Second SDRAM Device Width | | |
Second SDRAM Bank Groups | | |
Second SDRAM Banks Per Bank Group | | |
First SDRAM RFM RAAMMT | 0X (FGR: 0X) | 0X (FGR: 0X) |
First SDRAM RFM RAAIMT | 0 (FGR: 0) | 0 (FGR: 0) |
First SDRAM RFM Required | no | no |
First SDRAM RFM RAA Counter Decrement per REF command | RAAIMT / 2 | RAAIMT / 2 |
Second SDRAM RFM RAAMMT | | |
Second SDRAM RFM RAAIMT | | |
Second SDRAM RFM Required | | |
Second SDRAM RFM RAA Counter Decrement per REF command | | |
First SDRAM ARFM Level A RAAMMT | 0X (FGR: 0X) | 0X (FGR: 0X) |
First SDRAM ARFM Level A RAAIMT | 0 (FGR: 0) | 0 (FGR: 0) |
First SDRAM ARFM Level A supported | no | no |
First SDRAM ARFM Level A RAA Counter Decrement per REF command | RAAIMT / 2 | RAAIMT / 2 |
Second SDRAM ARFM Level A RAAMMT | | |
Second SDRAM ARFM Level A RAAIMT | | |
Second SDRAM ARFM Level A supported | | |
Second SDRAM ARFM Level A RAA Counter Decrement per REF command | | |
First SDRAM ARFM Level B RAAMMT | 0X (FGR: 0X) | 0X (FGR: 0X) |
First SDRAM ARFM Level B RAAIMT | 0 (FGR: 0) | 0 (FGR: 0) |
First SDRAM ARFM Level B supported | no | no |
First SDRAM ARFM Level B RAA Counter Decrement per REF command | RAAIMT / 2 | RAAIMT / 2 |
Second SDRAM ARFM Level B RAAMMT | | |
Second SDRAM ARFM Level B RAAIMT | | |
Second SDRAM ARFM Level B supported | | |
Second SDRAM ARFM Level B RAA Counter Decrement per REF command | | |
First SDRAM ARFM Level C RAAMMT | 0X (FGR: 0X) | 0X (FGR: 0X) |
First SDRAM ARFM Level C RAAIMT | 0 (FGR: 0) | 0 (FGR: 0) |
First SDRAM ARFM Level C supported | no | no |
First SDRAM ARFM Level C RAA Counter Decrement per REF command | RAAIMT / 2 | RAAIMT / 2 |
Second SDRAM ARFM Level C RAAMMT | | |
Second SDRAM ARFM Level C RAAIMT | | |
Second SDRAM ARFM Level C supported | | |
Second SDRAM ARFM Level C RAA Counter Decrement per REF command | | |
sPPR Granularity | bank group | bank group |
sPPR Undo/Lock | not supported | not supported |
Burst length 32 | supported | supported |
MBIST/mPPR | supported | supported |
mPPR/hPPR Abort | not supported | not supported |
PASR | not supported | not supported |
DCA Types Supported | Device supports DCA for single / 2-phase internal clock(s) | Device supports DCA for single / 2-phase internal clock(s) |
x4 RMW/ECS Writeback Suppression | supported | supported |
x4 RMW/ECS Writeback Suppression MR selector | MR15 | MR15 |
Bounded Fault | supported | supported |
SDRAM Nominal Voltage, VDDQ | 1.1V | 1.1V |
SDRAM Nominal Voltage, VPP | 1.8V | 1.8V |
Cyclical Redundancy Code (CRC) for Base Configuration | ec8c | ec8c |
| | |
XMP Attributes | | |
XMP version | 3.0 | 3.0 |
PMIC Vendor ID | 8A8C | 8A8C |
Number of PMICs on DIMM | 1 | 1 |
PMIC capabilities | | |
PMIC has capabilities for OC functions | Yes | Yes |
Current PMIC OC is enabled | Yes | Yes |
PMIC voltage default step size | 5mV | 5mV |
OC global reset functions | No | No |
Validation and Certification Capabilities | | |
DIMM is self-certified by DIMM vendor | No | No |
PMIC Component is validated by Intel AVL level | No | No |
XMP revision | 1.1 | 1.1 |
XMP Profile 1 | | |
Profile name | Lv1-7600C36 | Lv1-7600C36 |
XMP Certified | No | No |
Recommended number of DIMMs per channel | 1 | 1 |
Module VPP voltage | 1.80V | 1.80V |
Module VDD voltage | 1.40V | 1.40V |
Module VDDQ voltage | 1.40V | 1.40V |
Memory Controller voltage | 1.10V | 1.10V |
Clock speed (MHz) | 3800 | 3800 |
Transfer Speed (MT/s) | DDR5-7600 | DDR5-7600 |
Bandwidth (MB/s) | PC5-30400 | PC5-30400 |
Minimum clock cycle time, tCK (ns) | 0.263 | 0.263 |
Supported CAS latencies | 22 24 26 28 30 32 34 36 40 42 46 48 50 52 54 56 58 60 62 64 68 | 22 24 26 28 30 32 34 36 40 42 46 48 50 52 54 56 58 60 62 64 68 |
Minimum CAS latency time, tAA (ns) | 9.468 | 9.468 |
Minimum RAS to CAS delay time, tRCD (ns) | 12.098 | 12.098 |
Minimum row precharge time, tRP (ns) | 12.098 | 12.098 |
Minimum active to precharge time, tRAS (ns) | 31.823 | 31.823 |
Supported timing at highest clock speed | 36-46-46-121 | 36-46-46-121 |
Minimum Active to Auto-Refresh Delay, tRC (ns) | 43.921 | 43.921 |
Minimum Write Recovery Time, tWR (ns) | 29.982 | 29.982 |
Minimum Auto-Refresh to Active/Auto-Refresh Delay, tRFC1 (ns) | 295.000 | 295.000 |
Minimum Auto-Refresh to Active/Auto-Refresh Delay, tRFC2 (ns) | 160.000 | 160.000 |
Minimum Auto-Refresh to Active/Auto-Refresh Delay, tRFCsb (ns) | 130.000 | 130.000 |
Minimum Read to Read Command Delay Time, Same Bank Group, tCCD_L (ns) | 0.000 (0 nCK) | 0.000 (0 nCK) |
Minimum Write to Write Command Delay Time, Same Bank Group, tCCD_L_WR (ns) | 0.000 (0 nCK) | 0.000 (0 nCK) |
Minimum Write to Write Command Delay Time, Second Write not RMW, Same Bank Group, tCCD_L_WR2 (ns) | 0.000 (0 nCK) | 0.000 (0 nCK) |
Minimum Write to Read Command Delay Time, Same Bank Group, tCCD_L_WTR (ns) | 0.000 (0 nCK) | 0.000 (0 nCK) |
Minimum Write to Read Command Delay Time, Different Bank Group, tCCD_S_WTR (ns) | 0.000 (0 nCK) | 0.000 (0 nCK) |
Minimum Active to Active Command Delay Time, Same Bank Group, tRRD_L (ns) | 0.000 (0 nCK) | 0.000 (0 nCK) |
Minimum Read to Precharge Command Delay Time, tRTP (ns) | 0.000 (0 nCK) | 0.000 (0 nCK) |
Minimum Four Activate Window, tFAW (ns) | 0.000 | 0.000 |
Advanced Memory Overclocking Features | | |
Real-Time Memory Frequency Overclocking | Not supported | Not supported |
Intel Dynamic Memory Boost | Not supported | Not supported |
System CMD Rate Mode | 0N | 0N |
Vendor Personality Byte | 0x00 | 0x00 |
PassMark (R) Software
www.passmark.com
============================
Memory settings
============================
Transfer rate: 8000 MT/s
Memory timings: 36-46-46-58
Channel mode: 2
============================
Memory capacity / benchmarks
============================
L1 cache: 80 KB (632.3 GB/s)
L2 cache: 1024 KB (207.1 GB/s)
L3 cache: 98304 KB (153.1 GB/s)
Physical RAM: 31.7 GB (39510 MB/s)
Latency: 41.366 ns
============================
Memory SPD information
============================
Item | Slot #1 | Slot #2 |
---------------------------------------------------------------------------------------------------------------|-------------------------------------------------------------------|-------------------------------------------------------------------|-
Ram Type | DDR5 | DDR5 |
Maximum Clock Speed (MHz) | 3800 (XMP) | 3800 (XMP) |
Maximum Transfer Speed (MT/s) | DDR5-7600 | DDR5-7600 |
Maximum Bandwidth (MB/s) | PC5-30400 | PC5-30400 |
Memory Capacity (MB) | 16384 | 16384 |
DIMM Temperature | N/A | N/A |
Jedec Manufacture Name | G Skill Intl | G Skill Intl |
Search Amazon.com | Search! | Search! |
SPD Revision | 1.0 | 1.0 |
Registered | No | No |
ECC | No | No |
On-Die ECC | Yes | Yes |
DIMM Slot # | 1 | 2 |
Manufactured | | |
Module Part # | F5-7600J3646G16G | F5-7600J3646G16G |
Module Revision | 0x0 | 0x0 |
Module Serial # | 00000000 (84cd00000000000000) | 00000000 (84cd00000000000000) |
Module Manufacturing Location | 0 | 0 |
# of Row Addressing Bits | 16 | 16 |
# of Column Addressing Bits | 10 | 10 |
# of Banks | 32 | 32 |
# of Ranks | 1 | 1 |
Device Width in Bits | 8 | 8 |
Bus Width in Bits | 32 | 32 |
Module Voltage | 1.1V | 1.1V |
CAS Latencies Supported | 22 28 30 32 36 40 42 | 22 28 30 32 36 40 42 |
Timings @ Max Frequency (JEDEC) | 40-40-40-77 | 40-40-40-77 |
Maximum frequency (MHz) | 2400 | 2400 |
Maximum Transfer Speed (MT/s) | DDR5-4800 | DDR5-4800 |
Maximum Bandwidth (MB/s) | PC5-19200 | PC5-19200 |
Minimum Clock Cycle Time, tCK (ns) | 0.416 | 0.416 |
Minimum CAS Latency Time, tAA (ns) | 16.666 | 16.666 |
Minimum RAS to CAS Delay, tRCD (ns) | 16.666 | 16.666 |
Minimum Row Precharge Time, tRP (ns) | 16.666 | 16.666 |
Minimum Active to Precharge Time, tRAS (ns) | 32.000 | 32.000 |
Minimum Row Active to Row Active Delay, tRRD (ns) | 0.000 | 0.000 |
Minimum Auto-Refresh to Active/Auto-Refresh Time, tRC (ns) | 48.666 | 48.666 |
Minimum Auto-Refresh to Active/Auto-Refresh Command Period, tRFC (ns) | 295.000 | 295.000 |
| | |
DDR5 Specific SPD Attributes | | |
Maximum Clock Cycle Time, tCKmax (ns) | 1.010 | 1.010 |
Write Recovery time (ns) | 30.000 | 30.000 |
Minimum Auto-Refresh to Active/Auto Refresh Command Period, tRFC2 (ns) | 160.000 | 160.000 |
Minimum Auto-Refresh to Active/Auto Refresh Command Period, tRFC4 (ns) | 130.000 | 130.000 |
Minimum Refresh Recovery Delay Time, tRFC1 (ns) | 0.000 | 0.000 |
Minimum Refresh Recovery Delay Time, tRFC2 (ns) | 0.000 | 0.000 |
Minimum Refresh Recovery Delay Time, tRFCsb (ns) | 0.000 | 0.000 |
Module Type | UDIMM | UDIMM |
Module information SPD revision | 1.0 | 1.0 |
SPD present | Yes | Yes |
SPD device type | SPD5118 | SPD5118 |
SPD Manufacturer | Montage Technology Group (Bank: 7, ID: 0x32) | Montage Technology Group (Bank: 7, ID: 0x32) |
PMIC 0 present | Yes | Yes |
PMIC 0 device type | PMIC5100 | PMIC5100 |
PMIC 0 Manufacturer | Richtek Power (Bank: 11, ID: 0x8C) | Richtek Power (Bank: 11, ID: 0x8C) |
PMIC 1 present | No | No |
PMIC 1 device type | | |
PMIC 1 Manufacturer | | |
PMIC 2 present | No | No |
PMIC 2 device type | | |
PMIC 2 Manufacturer | | |
Thermal Sensor 0 present | No | No |
Thermal Sensor 1 present | No | No |
Thermal Sensor device type | | |
Thermal Sensor Manufacturer | | |
Module Height (mm) | 32 | 32 |
Module Thickness Front (mm) | 2 | 2 |
Module Thickness Back (mm) | 1 | 1 |
Module Reference Card | Raw Card A Rev. 0 | Raw Card A Rev. 0 |
# DRAM Rows | 1 | 1 |
Heat spreader installed | No | No |
Operating Temperature Range | XT (0 to + 95 °C) | XT (0 to + 95 °C) |
Rank Mix | Symmetrical | Symmetrical |
Number of Package Ranks per Channel | 1 | 1 |
Number of Channels per DIMM | 2 | 2 |
Primary bus width per Channel | 32 bits | 32 bits |
Bus width extension per Channel | 0 bits | 0 bits |
DRAM Manufacture ID | 173 | 173 |
DRAM Manufacture Bank | 1 | 1 |
DRAM Manufacture Name | SK Hynix | SK Hynix |
DRAM Stepping | 0.0 | 0.0 |
SDRAM Package Type | Monolithic SDRAM | Monolithic SDRAM |
SDRAM Density Per Die | 16Gb | 16Gb |
SDRAM Bank Groups | 8 | 8 |
SDRAM Banks Per Bank Group | 4 | 4 |
Second SDRAM Package Type | | |
Second SDRAM Density Per Die | | |
Second SDRAM Column Address Bits | | |
Second SDRAM Row Address Bits | | |
Second SDRAM Device Width | | |
Second SDRAM Bank Groups | | |
Second SDRAM Banks Per Bank Group | | |
First SDRAM RFM RAAMMT | 0X (FGR: 0X) | 0X (FGR: 0X) |
First SDRAM RFM RAAIMT | 0 (FGR: 0) | 0 (FGR: 0) |
First SDRAM RFM Required | no | no |
First SDRAM RFM RAA Counter Decrement per REF command | RAAIMT / 2 | RAAIMT / 2 |
Second SDRAM RFM RAAMMT | | |
Second SDRAM RFM RAAIMT | | |
Second SDRAM RFM Required | | |
Second SDRAM RFM RAA Counter Decrement per REF command | | |
First SDRAM ARFM Level A RAAMMT | 0X (FGR: 0X) | 0X (FGR: 0X) |
First SDRAM ARFM Level A RAAIMT | 0 (FGR: 0) | 0 (FGR: 0) |
First SDRAM ARFM Level A supported | no | no |
First SDRAM ARFM Level A RAA Counter Decrement per REF command | RAAIMT / 2 | RAAIMT / 2 |
Second SDRAM ARFM Level A RAAMMT | | |
Second SDRAM ARFM Level A RAAIMT | | |
Second SDRAM ARFM Level A supported | | |
Second SDRAM ARFM Level A RAA Counter Decrement per REF command | | |
First SDRAM ARFM Level B RAAMMT | 0X (FGR: 0X) | 0X (FGR: 0X) |
First SDRAM ARFM Level B RAAIMT | 0 (FGR: 0) | 0 (FGR: 0) |
First SDRAM ARFM Level B supported | no | no |
First SDRAM ARFM Level B RAA Counter Decrement per REF command | RAAIMT / 2 | RAAIMT / 2 |
Second SDRAM ARFM Level B RAAMMT | | |
Second SDRAM ARFM Level B RAAIMT | | |
Second SDRAM ARFM Level B supported | | |
Second SDRAM ARFM Level B RAA Counter Decrement per REF command | | |
First SDRAM ARFM Level C RAAMMT | 0X (FGR: 0X) | 0X (FGR: 0X) |
First SDRAM ARFM Level C RAAIMT | 0 (FGR: 0) | 0 (FGR: 0) |
First SDRAM ARFM Level C supported | no | no |
First SDRAM ARFM Level C RAA Counter Decrement per REF command | RAAIMT / 2 | RAAIMT / 2 |
Second SDRAM ARFM Level C RAAMMT | | |
Second SDRAM ARFM Level C RAAIMT | | |
Second SDRAM ARFM Level C supported | | |
Second SDRAM ARFM Level C RAA Counter Decrement per REF command | | |
sPPR Granularity | bank group | bank group |
sPPR Undo/Lock | not supported | not supported |
Burst length 32 | supported | supported |
MBIST/mPPR | supported | supported |
mPPR/hPPR Abort | not supported | not supported |
PASR | not supported | not supported |
DCA Types Supported | Device supports DCA for single / 2-phase internal clock(s) | Device supports DCA for single / 2-phase internal clock(s) |
x4 RMW/ECS Writeback Suppression | supported | supported |
x4 RMW/ECS Writeback Suppression MR selector | MR15 | MR15 |
Bounded Fault | supported | supported |
SDRAM Nominal Voltage, VDDQ | 1.1V | 1.1V |
SDRAM Nominal Voltage, VPP | 1.8V | 1.8V |
Cyclical Redundancy Code (CRC) for Base Configuration | ec8c | ec8c |
| | |
XMP Attributes | | |
XMP version | 3.0 | 3.0 |
PMIC Vendor ID | 8A8C | 8A8C |
Number of PMICs on DIMM | 1 | 1 |
PMIC capabilities | | |
PMIC has capabilities for OC functions | Yes | Yes |
Current PMIC OC is enabled | Yes | Yes |
PMIC voltage default step size | 5mV | 5mV |
OC global reset functions | No | No |
Validation and Certification Capabilities | | |
DIMM is self-certified by DIMM vendor | No | No |
PMIC Component is validated by Intel AVL level | No | No |
XMP revision | 1.1 | 1.1 |
XMP Profile 1 | | |
Profile name | Lv1-7600C36 | Lv1-7600C36 |
XMP Certified | No | No |
Recommended number of DIMMs per channel | 1 | 1 |
Module VPP voltage | 1.80V | 1.80V |
Module VDD voltage | 1.40V | 1.40V |
Module VDDQ voltage | 1.40V | 1.40V |
Memory Controller voltage | 1.10V | 1.10V |
Clock speed (MHz) | 3800 | 3800 |
Transfer Speed (MT/s) | DDR5-7600 | DDR5-7600 |
Bandwidth (MB/s) | PC5-30400 | PC5-30400 |
Minimum clock cycle time, tCK (ns) | 0.263 | 0.263 |
Supported CAS latencies | 22 24 26 28 30 32 34 36 40 42 46 48 50 52 54 56 58 60 62 64 68 | 22 24 26 28 30 32 34 36 40 42 46 48 50 52 54 56 58 60 62 64 68 |
Minimum CAS latency time, tAA (ns) | 9.468 | 9.468 |
Minimum RAS to CAS delay time, tRCD (ns) | 12.098 | 12.098 |
Minimum row precharge time, tRP (ns) | 12.098 | 12.098 |
Minimum active to precharge time, tRAS (ns) | 31.823 | 31.823 |
Supported timing at highest clock speed | 36-46-46-121 | 36-46-46-121 |
Minimum Active to Auto-Refresh Delay, tRC (ns) | 43.921 | 43.921 |
Minimum Write Recovery Time, tWR (ns) | 29.982 | 29.982 |
Minimum Auto-Refresh to Active/Auto-Refresh Delay, tRFC1 (ns) | 295.000 | 295.000 |
Minimum Auto-Refresh to Active/Auto-Refresh Delay, tRFC2 (ns) | 160.000 | 160.000 |
Minimum Auto-Refresh to Active/Auto-Refresh Delay, tRFCsb (ns) | 130.000 | 130.000 |
Minimum Read to Read Command Delay Time, Same Bank Group, tCCD_L (ns) | 0.000 (0 nCK) | 0.000 (0 nCK) |
Minimum Write to Write Command Delay Time, Same Bank Group, tCCD_L_WR (ns) | 0.000 (0 nCK) | 0.000 (0 nCK) |
Minimum Write to Write Command Delay Time, Second Write not RMW, Same Bank Group, tCCD_L_WR2 (ns) | 0.000 (0 nCK) | 0.000 (0 nCK) |
Minimum Write to Read Command Delay Time, Same Bank Group, tCCD_L_WTR (ns) | 0.000 (0 nCK) | 0.000 (0 nCK) |
Minimum Write to Read Command Delay Time, Different Bank Group, tCCD_S_WTR (ns) | 0.000 (0 nCK) | 0.000 (0 nCK) |
Minimum Active to Active Command Delay Time, Same Bank Group, tRRD_L (ns) | 0.000 (0 nCK) | 0.000 (0 nCK) |
Minimum Read to Precharge Command Delay Time, tRTP (ns) | 0.000 (0 nCK) | 0.000 (0 nCK) |
Minimum Four Activate Window, tFAW (ns) | 0.000 | 0.000 |
Advanced Memory Overclocking Features | | |
Real-Time Memory Frequency Overclocking | Not supported | Not supported |
Intel Dynamic Memory Boost | Not supported | Not supported |
System CMD Rate Mode | 0N | 0N |
Vendor Personality Byte | 0x00 | 0x00 |
Zuletzt bearbeitet:
Das weiß ich nicht, bei mir sind die dauerhaft an, aber habe einen Kühlblock drauf der alles verdeckt.
Sind JEDEC 4800BN Bins, sieht man an der tRC von 48,666ns
Dragonheart69
Enthusiast
Du hast doch 48 GB....Können sowieso keine H16A sein höchstens H24M oder habe ich jetzt einen Denkfehler..??
Felix the Cat
Der mit SeLecT tanzt
@Dragonheart69
Vollkommen korrekt. Das sind Hynix M-Die.
___________
Ich bin nun noch am überlegen, welches Kit ich behalte. Habe aktuell ein 32GB Kit 6400Mhz da, welches ich immer mit 6400Mhz C30 laufen hatte. Ist ein Hynix A-Die Kit von A-Data.
Habe dann noch ein 48GB 8000Mhz Kit von Teamgroup da, welche ich auch immer mit 6400Mhz C30 laufen hatte. Aber halt die Option, dass 8000Mhz+ auch ohne Probleme laufen werden.
Also ein gutes M-Die Kit.
Letzte Woche ist neue hinzugekommen ein 96GB 6400Mhz C32 Kit von Kingbank. Das läuft aktuell mit 6200Mhz C32, aber das habe ich auch noch nicht wirklich ausgetestet. Also somit auch Hynix-M Die.
Brauchen tue ich keine 96GB, aber das Kit war einfach günstig und das würde ich im Gegensatz zum Teamgroup Kit auch auf Wasserkühlung umbauen.
Mit dem PC zocke ich nur, aber haben ist bekanntlich auch besser als brauchen.
.
Vollkommen korrekt. Das sind Hynix M-Die.
___________
Ich bin nun noch am überlegen, welches Kit ich behalte. Habe aktuell ein 32GB Kit 6400Mhz da, welches ich immer mit 6400Mhz C30 laufen hatte. Ist ein Hynix A-Die Kit von A-Data.
Habe dann noch ein 48GB 8000Mhz Kit von Teamgroup da, welche ich auch immer mit 6400Mhz C30 laufen hatte. Aber halt die Option, dass 8000Mhz+ auch ohne Probleme laufen werden.
Also ein gutes M-Die Kit.
Letzte Woche ist neue hinzugekommen ein 96GB 6400Mhz C32 Kit von Kingbank. Das läuft aktuell mit 6200Mhz C32, aber das habe ich auch noch nicht wirklich ausgetestet. Also somit auch Hynix-M Die.
Brauchen tue ich keine 96GB, aber das Kit war einfach günstig und das würde ich im Gegensatz zum Teamgroup Kit auch auf Wasserkühlung umbauen.
Mit dem PC zocke ich nur, aber haben ist bekanntlich auch besser als brauchen.
.Ähnliche Themen
