Hello there. I am a new user who found this forum thanks to other forums like overclock.net and also a lot of google searching. This seems to be the most COMPREHENSIVE thread of C-die owners with overclocking results on the entire web. I am still reading through this thread there is a lot of information to take in.
So I come seeking assistance. I have Samsung C-Die in my Rig. I have 4x8GB Avexir Core 2 3600 18-20-20-20-44 memory and the IC's are K4A8G085W
C-BCTD
Here is the 3600 XMP profile
I obviously want to overclock these further than just stock XMP.
I have :
Ryzen 3800X
Gigabyte Aorus X570 Pro Wifi
4x8GB Avexir Core 2 3600 18-20-20-20-44
Firstly I think I am already VERY close to the limit of this memory as sometimes its not even stable at XMP. But I think the motherboard is at fault for that. I say this because the gigabyte motherboard is very aggressive with the voltages.
If I SET VDIMM to 1.35v I get 1.38V
I I SET DRAM VTT to 0.6V I get 0.67V
I dont know how aggressive my board is being with the DRAM VPP voltage as well I cant seem to see if I can monitor it in HWIFNO
I know C-die is very voltage sensitive above 1.35V. But is C-Die also sensitive to the secondary voltages as well? And how best to set the secondary timings.
I want to TRY get 3700MHz( 101x18.66x2). If I cant I will go for 3636MHz (101Mhz x 18 x 2 DDR) i use 101BCLK to get more boost out of my Ryzen.
Also I am not very knowledgeable about secondary and tertiary timings. I can do primaries but that's as far as my knowledge goes. I didn't bother with secondary timings back in DDR2 and 3 days. Things like timings being in a ratio or in sync with one another. I've seen forum posts saying TRP, TRC, TWR, TRTP and TRFC being linked somehow? Or TRFC is a multiple of TRC. Or TRC is TRAS+TRP. I feel a bit out of my depth. In the DDR3 days I didn't bother with secondaries or tertiary's. I aimed for my primaries and that was that.
Also how does C-die Respond to ProcODT and also Drive strengths?